发明名称 |
Semiconductor device and manufacturing method thereof to prevent a notch |
摘要 |
A method for manufacturing a semiconductor device includes: preparing a substrate in which a first interlayer insulation layer having a first via hole and a first trench is formed; forming a first via plug and a first metal line by filling the first via hole and the first trench with a first metal; planarizing the first metal line and the first interlayer insulation layer; forming a second interlayer insulation layer on the first metal line and the first interlayer insulation layer; planarizing the second interlayer insulation layer; forming a second via hole and a second trench in the second interlayer insulation layer; forming a second via plug and a second metal line by filling the second via hole and the second trench with a second metal; and planarizing the second metal line and the second interlayer insulation layer.
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申请公布号 |
US7432190(B2) |
申请公布日期 |
2008.10.07 |
申请号 |
US20050320890 |
申请日期 |
2005.12.30 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
HONG MIN DAE |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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