发明名称 Gate driving circuit
摘要 The present invention relates to a gate driving circuit, comprising a driver control circuit, a voltage following bias circuit, a pull up circuit and a MOS transistor. The driver control circuit receives an active signal and generates a pull up signal or a pull down signal. In case of the pull up signal, the MOS transistor is turned to the OFF state by the pull up circuit, and there is no current for the output load device. In case of the pull down signal, the MOS transistor is turned to the ON state by the voltage following bias circuit. The driving voltage for the gate of the MOS transistor has a constant voltage drop according to the external supply voltage. Therefore, the gate driving circuit of the present invention provides a constant current for the output load device.
申请公布号 US7432747(B1) 申请公布日期 2008.10.07
申请号 US20070730754 申请日期 2007.04.04
申请人 ETRON TECHNOLOGY INC. 发明人 LIU YAO YI;CHANG YEN-AN
分类号 H03B1/00 主分类号 H03B1/00
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