发明名称 |
Bias circuits and methods for enhanced reliability of flash memory device |
摘要 |
A non-volatile semiconductor memory device includes: cell strings connected to respective bit lines; each of the cell strings having a string select transistor connected to a string select line, a ground select transistor connected to a ground select line, and memory cells connected to corresponding word lines and connected in series between the string select transistor and the ground select transistor; a first voltage drop circuit configured to reduce an applied read voltage during a read operation; a second voltage drop circuit configured to reduce the applied read voltage; a string select line driver circuit configured to drive the string select line with the reduced voltage provided by the first voltage drop circuit; and a ground select line driver circuit configured to drive a ground select line with the reduced voltage provided by the second voltage drop circuit.
|
申请公布号 |
US7433235(B2) |
申请公布日期 |
2008.10.07 |
申请号 |
US20050320096 |
申请日期 |
2005.12.28 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
CHAE DONG-HYUK;LIM YOUNG-HO |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|