| 摘要 |
At least a laminate of a gate insulating film 6 and a gate electrode 7 and an active region 13 are formed on a silicon substrate 1 , and an underlying interlayer insulating film 10 is further formed. Then, a conductor 11 a connected to the gate electrode 7 , and a conductor 11 b that is a dummy conductor and is connected to the active region 13 are formed simultaneously on the underlying interlayer insulating film 10 . Thereafter, an interlayer insulating film 12 is formed on the underlying interlayer insulating film 10 by a plasma process. At this time, charging current from a plasma 14 is emitted through the conductor 11 b, which is a dummy conductor.
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