| 摘要 |
A semiconductor device capable of reducing electrical leakage generated when a contact hole is misaligned and a manufacturing method thereof is disclosed. The semiconductor device includes three conductive layers with various and different portions overlapping each other. The conductive layers are separated by insulating layers and connected by contact holes formed in the insulating layers between the overlapping potions. Thus, electric leakage, caused by misalignment when forming the contact hole to electrically connect the conductive layers to each other, can be prevented.
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