| 摘要 |
A surface-spintronic device operating on a novel principles of operations may be implemented as a spin conducting, a spin switching or a spin memory device. It includes a magnetic atom thin film ( 13 ) layered on a surface of a solid crystal ( 12 ) and a drain and a source electrodes ( 14 )and ( 15 ) disposed at two locations on the magnetic atom thin film, respectively, whereby a spin splitting surface electronic state band formed in a system comprising said solid crystal( 12 ) surface and said magnetic atom thin film ( 13 ) is utilized to obtain a spin polarized current flow. With electrons spin-polarized in a particular direction injected from the source electrode ( 15 ), controlling the direction of magnetization of the magnetic atom thin film ( 13 ) allows switching on and off the conduction of such injected electrons therethrough. Also, with the use of the magnetization holding function of the magnetic atom thin film ( 13 ), it is possible to realize a spin memory device that can operate to write information on controlling the direction of magnetization of the magnetic atom thin film ( 13 ) and that can operate to read information on detecting the electrodes ( 15, 14 ).
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