发明名称 Selective etching of oxides from substrates
摘要 A method and system for release etching a micro-electrical-mechanical-systems (MEMS) device from a substrate. In one aspect, the invention is a method comprising (a) supporting at least one substrate having a sacrificial oxide and a non-sacrificial material in a process chamber at a pressure and at a temperature; (b) introducing a gas phase mixture comprising a halide-containing species and an alcohol vapor selected from a group consisting of ethanol, 1-propanol, and an aliphatic alcohol having four carbon groups into the process chamber, the gas phase mixture having a volumetric ratio of the halide-containing species to the alcohol vapor of approximately 2 or less; and (c) etching the sacrificial oxide with the gas phase mixture. In another aspect, the invention is a system for carrying out the method.
申请公布号 US7431853(B2) 申请公布日期 2008.10.07
申请号 US20060370541 申请日期 2006.03.08
申请人 PRIMAXX, INC. 发明人 MUMBAUER PAUL D.;ROMAN PAUL;GRANT ROBERT
分类号 C23F1/00 主分类号 C23F1/00
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