发明名称 Light emitting diode with conducting metal substrate
摘要 Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate.
申请公布号 US7432119(B2) 申请公布日期 2008.10.07
申请号 US20050032882 申请日期 2005.01.11
申请人 SEMILEDS CORPORATION 发明人 DOAN TRUNG TRI
分类号 H01L21/20;H01L33/00 主分类号 H01L21/20
代理机构 代理人
主权项
地址