发明名称 |
Plasma generation and control using a dual frequency RF source |
摘要 |
A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.
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申请公布号 |
US7431857(B2) |
申请公布日期 |
2008.10.07 |
申请号 |
US20040843914 |
申请日期 |
2004.05.12 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SHANNON STEVEN C.;PATERSON ALEX;PANAGOPOULOS THEODOROS;HOLLAND JOHN P.;GRIMARD DENNIS;TAKAKURA YASHUSHI |
分类号 |
G01R31/00;H01L21/3065;H01J37/32 |
主分类号 |
G01R31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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