发明名称 |
Flash memory device for performing bad block management and method of performing bad block management of flash memory device |
摘要 |
A flash memory device for performing a bad block management and a method of performing bad block management are implemented in hardware level. During a booting procedure of a flash memory device, a bad block-mapping table stored in a predetermined block of memory cell array unit or other nonvolatile memory is stored in a bad block mapping register via a bad block-mapping table loader. An address selector receives a logical address from an external device and compares the logical address with a bad block address stored in the bad block mapping register. A bad block-state controller determines a count number of a re-mapping mark and outputs a re-mapping mark flag to the address selector. The address selector selects a logical address or a bad block address received from the bad block mapping register as a physical address and outputs the physical address to the memory cell array unit.
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申请公布号 |
US7434122(B2) |
申请公布日期 |
2008.10.07 |
申请号 |
US20050056844 |
申请日期 |
2005.02.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JO SEONG-KUE |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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