发明名称 CMOS image sensor and manufacturing method thereof
摘要 A CMOS image sensor-manufacturing method includes forming a photodiode on a substrate, forming an insulating layer over the substrate, forming a contact hole in the insulating layer, and forming a gate terminal over the insulating layer. The gate terminal is connected to the photodiode through the contact hole.
申请公布号 US7432125(B2) 申请公布日期 2008.10.07
申请号 US20040954494 申请日期 2004.10.01
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 JEON IN-GYUN
分类号 H01L21/00;H01L27/146;H01L31/062 主分类号 H01L21/00
代理机构 代理人
主权项
地址