发明名称 LCOS COLUMN MEMORY EFFECT REDUCTION
摘要 The invention concerns a method for reducing the effect of column memory. The method includes the steps of activating one of a plurality of row electrodes, selectively applying a video input signal to a plurality of column electrodes, and setting at least one of the plurality of column electrodes to a substantially constant voltage prior to activating a subsequent row electrode. In one arrangement, the substantially constant voltage can correlate to a flat field. The method can also include repeating the steps of activating one of the plurality of row electrodes step, selectively applying the video input signal step, and setting at least one of the plurality of column electrodes to the substantially constant voltage step in which the steps can be performed in a liquid crystal on silicon imager.
申请公布号 KR100861629(B1) 申请公布日期 2008.10.07
申请号 KR20037016047 申请日期 2003.12.08
申请人 发明人
分类号 G09G3/36 主分类号 G09G3/36
代理机构 代理人
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