| 发明名称 |
Method for etching object to be processed |
| 摘要 |
An object to be processed has a structure having an SiC film and an organic Si-low dielectric constant film formed on the SiC film. The SiC film is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film as a mask. The etching gas contains CH<SUB>2</SUB>F<SUB>2 </SUB>or CH<SUB>3</SUB>F.
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| 申请公布号 |
US7432207(B2) |
申请公布日期 |
2008.10.07 |
| 申请号 |
US20040486363 |
申请日期 |
2004.03.01 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
FUSE TAKASHI;FUJIMOTO KIWAMU;YAMAGUCHI TOMOYO |
| 分类号 |
H01L21/302;H01L21/027;H01L21/3065;H01L21/311;H01L21/312;H01L21/768 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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