| 摘要 |
A semiconductor storage device including a memory cell. In the memory cell a buried electrode is formed on a semiconductor substrate. A semiconductor layer is formed on the buried electrode via a buried insulating film. A surface electrode is formed on the semiconductor layer via an insulating film. A source region and drain region are formed in the semiconductor layer on both sides of the surface electrode with a predetermined spacing therebetween. A floating body is formed between the source region and drain region, which stores data in accordance with whether holes are stored in the floating body. The buried electrode serves as a gate electrode, and the surface electrode serves as a plate electrode.
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