| 摘要 |
A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region therebetween extending generally across the diameter of said wafer support, the enclosure having a first and second pairs of openings therethrough, the two openings of each of the first and second pairs being near generally opposite sides of said workpiece support, a first hollow conduit outside of the process region and connected to the first pair of openings, providing a first torroidal path extending through the conduit and across the process region, a second hollow conduit outside of the process region and connected to the second pair of openings, providing a second torroidal path extending through the conduit and across the process region, first and second plasma source power applicators inductively coupled to the interiors of the first and second hollow conduits, respectively, each of the first and second plasma source power applicators being capable of maintaining a plasma in a respective one of the first and second torroidal paths, an RF power generator providing an RF output current, a current switching network connected between the RF power generator and the first and second plasma source power applicators for applying respective periodic time segments of RF output current to respective ones of said first and second plasma source power applicators.
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