NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element with improved light extraction efficiency, and a manufacturing method.

SOLUTION: A nitride semiconductor light emitting element includes: a light emitting stacked structure having first and second conductive nitride semiconductor layers and an active layer formed between them; first and second electrode pads formed so as to be electrically connected to each one of the first and second conductive nitride semiconductor layers; a plurality of patterns in a lower part of the second electrode pad so as to have a depth up to at least a part of the first conductive nitride semiconductor layer; and an insulating film formed on an inner surface of the plurality of patterns so as to electrically insulate an area of the light emitting stacked structure exposed by the plurality of patterns and the second electrode pad.

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