| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device which can ensure characteristics required for a TFT or various circuits without increasing a process when a P-channel TFT and an N-channel TFT are formed on the same substrate, and to provide its manufacturing method. SOLUTION: In addition to n-type impurity regions 33b and 33c functioning as a channel forming region 33a and a source region or a drain region, a semiconductor layer 33 has an impurity region 33d where boron is added below the channel forming region 33a, i.e., in the vicinity of the surface of the channel forming region 33a on the side touching an insulating layer 32. In addition to p-type impurity regions 34b and 34c functioning as a channel forming region 34a and a source region or a drain region, a semiconductor layer 34 has an impurity region 34d where boron is added below the channel forming region 34a, i.e., in the vicinity of the surface of the channel forming region 34a on the side touching the insulating layer 32. COPYRIGHT: (C)2008,JPO&INPIT
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