发明名称 |
SEMICONDUCTOR DEVICE COMPRISING MULTILAYER DIELECTRIC FILM AND RELATED METHOD |
摘要 |
A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.
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申请公布号 |
US2008203529(A1) |
申请公布日期 |
2008.08.28 |
申请号 |
US20080034868 |
申请日期 |
2008.02.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG SANG-YEOL;LEE JONG-CHEOL;LIM KI-VIN;CHOI HOON-SANG;CHUNG EUN-AE |
分类号 |
H01L29/92;H01L21/02 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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地址 |
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