发明名称 SEMICONDUCTOR DEVICE COMPRISING MULTILAYER DIELECTRIC FILM AND RELATED METHOD
摘要 A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.
申请公布号 US2008203529(A1) 申请公布日期 2008.08.28
申请号 US20080034868 申请日期 2008.02.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG SANG-YEOL;LEE JONG-CHEOL;LIM KI-VIN;CHOI HOON-SANG;CHUNG EUN-AE
分类号 H01L29/92;H01L21/02 主分类号 H01L29/92
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