| 摘要 |
A field-effect transistor having cells ( 18 ) each having a source region ( 22 ), source body region ( 26 ), drift region ( 20 ), drain body region ( 28 ) and drain region ( 24 ) arranged longitudinally, laterally alternating with structures to achieve a reduced surface field. In embodiments, the structures can include longitudinally spaced insulated gate trenches ( 35 ) defining a gate region ( 31 ) adjacent the source or drain region ( 22, 24 ) and a longitudinally extending potential plate region ( 33 ) adjacent the drift region ( 20 ). Alternatively, a separate potential plate region ( 33 ) or a longitudinally extending semi-insulating field plate ( 50 ) may be provided adjacent the drift region ( 20 ). The transistor is suitable for bi-directional switching.
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