发明名称 HIGH-SPEED MEMORY PACKAGE
摘要 The semiconductor package includes a dielectric layer, a trace layer, a conductive layer, a die and an underfill layer. The dielectric layer has first side and an opposing dielectric layer second side. Multiple vias extend through the dielectric layer from the dielectric layer first side to the dielectric layer second side. Multiple solder balls are disposed at the dielectric layer second side. Each of the solder balls is electrically coupled to a different one of the vias. The die is electrically coupled to the solder balls. The conductive layer is disposed between the dielectric layer second side and the die. The conductive layer defines a window there through for allowing the solder balls to electrically couple to the vias without contacting the conductive layer, i.e., no physical or electrical contact. The underfill layer is formed between the die and the conductive layer, while the trace layer is formed at the dielectric layer first side. Traces of the trace layer electrically couple the vias to other solder balls.
申请公布号 WO2008103752(A1) 申请公布日期 2008.08.28
申请号 WO2008US54455 申请日期 2008.02.20
申请人 RAMBUS INC.;LI, MING 发明人 LI, MING
分类号 H01L23/60 主分类号 H01L23/60
代理机构 代理人
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