发明名称 |
PULSED PLASMA SYSTEM WITH PULSED REACTION GAS REPLENISH FOR ETCHING SEMICONDUCTOR STRUCTURES |
摘要 |
<p>A pulsed plasma system with pulsed reaction gas replenish for etching semiconductor structures is described. In an embodiment, a portion of a sample is removed by applying a pulsed plasma etch process. The pulsed plasma etch process comprises a plurality of duty cycles, wherein each duty cycle represents the combination of an ON state and an OFF state of a plasma. The plasma is generated from a reaction gas, wherein the reaction gas is replenished during the OFF state of the plasma, but not during the ON state. In another embodiment, a first portion of a sample is removed by applying a continuous plasma etch process. The continuous plasma etch process is then terminated and a second portion of the sample is removed by applying a pulsed plasma etch process having pulsed reaction gas replenish.</p> |
申请公布号 |
WO2008103453(A1) |
申请公布日期 |
2008.08.28 |
申请号 |
WO2008US02367 |
申请日期 |
2008.02.21 |
申请人 |
US;US;US;US;US;US |
发明人 |
KIM, TAE, WON;LEE, KYEONG-TAE;PATERSON, ALEXANDER;TODOROW, VALENTIN, N.;DESHMUKH, SHASHANK, C. |
分类号 |
H01J37/32;H01L21/306 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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