| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve processing dimension accuracy for a film to be processed in a technology which superimposes a plurality of resist films to form a mask and processes the film to be processed. <P>SOLUTION: Step ST11: Design pattern data are prepared in which contact holes are arranged on a part of grid points in matrix. Step ST12: First mask pattern data are prepared in which first opening patterns are arranged on all of the grid points. Step ST13 - Step ST15: Second mask pattern data are designed in which second opening patterns and third opening patterns are overlapped, wherein the second opening patterns are arranged on the grid points, at which the contact holes are arranged, in the design pattern data to include the first opening patterns, and the third opening patterns are arranged on a pair of the grid points, which are a pair of diagonal grid points of four grids composing a unit grid, only on which the contact holes are arranged. <P>COPYRIGHT: (C)2008,JPO&INPIT |
