| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device capable of preventing current collapse. SOLUTION: A buffer layer (GaN) 12, a channel layer (GaN) 13, a carrier supply layer (n-AlGaN) 14 and a Schottky layer (AlGaN) 15 are sequentially laminated on a sapphire substrate 11, and a cap layer (GaN) 16 is laminated on the Schottky layer 15. The cap layer 16 is of a polycrystalline structure in which a half width of an X-ray diffraction rocking curve on a (004) plane is within an angle range of 4,000-12,000 seconds. This cap layer 16 reduces electrons trapped in a surface level or surface level density of the cap layer 16. COPYRIGHT: (C)2008,JPO&INPIT
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