| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device having high sensitivity characteristics by reducing distance from an on-chip lens to the surface of a semiconductor substrate while preventing deterioration of a reproduced picture caused by leakage current. SOLUTION: Silicide layers 201 and 202 are respectively laminated on gate electrodes 104 and 113 in each of a transfer transistor 12 and a reset transistor 15. The silicide layers 201 and 202 formed on the gate electrodes 104 and 113, respectively, are extended in a direction along a principal surface of a semiconductor substrate among at least a part of a plurality of imaging pixels, to connect the imaging pixels 10 of the gate electrodes 104 and 113. Meanwhile, a signal output part 105 is covered with an insulating layer 121 without contacting to any silicide layer, and connected to another transistor via a metal wiring layer. COPYRIGHT: (C)2008,JPO&INPIT
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