Hydride vapor phase epitaxy method for producing aluminum gallium indium nitride mono-crystal, used in optoelectronics, particularly for ight-emitting diodes, involves utilizing mixture of aluminum, gallium and indium metals

摘要

Hydride vapor phase epitaxy (HVPE) method involves utilizing mixture of aluminum, gallium and indium metals. The metals, are converted with hydrogen compounds of halogens at 500-950[deg] C, into aluminum, gallium and indium-halides. Aluminum, gallium and indium-halide is converted with the hydrogen compounds at a substrate at 850-1200[deg] C, to aluminum gallium indium nitride, and substrate is seperated. Excess reactants and the formed gaseous waste products are discharged.