SEMICONDUCTOR DIE WITH SEPARATION TRENCH ETCH AND PASSIVATION

摘要

A trench is etched into a scribe path (110) located between integrated circuit dies (105) formed on a semiconductor wafer (100). The etching is conducted to a depth within the semiconductor wafer that extends beyond a depth of circuitry (103) and forms an edge of the die on which a passivation layer is placed. A back surface of the wafer (100) is removed until it intersects the trench. This separates the dies from the wafer, without removing the passivation layer from die edges.