发明名称 THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND ITS MANUFACTURING METHOD, AND DISPLAY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a thin-film transistor array substrate wherein contact holes which can surely establish conduction with a semiconductor layer can be effectively formed, and to provide its manufacturing method and a display device. SOLUTION: The thin-film transistor array substrate 100 comprises a semiconductor layer 3 which is formed on a substrate 1 and has a source region 31, a drain region 32, and a channel region 33; gate insulation film 4a which covers the semiconductor layer 3 and has openings 4b above the source region 31 and drain region 32; gate electrode 5 disposed face to face with the channel region 33 via the gate insulation film 4a; interlayer insulation film 6 which covers the gate electrode 5 and gate insulation film 4a and fills up the openings 4b; and signal interconnection electrodes 71 and 72 which are connected to the source region 31 and drain region 32, respectively, via contact holes 10a which penetrate the interlayer insulation film 6 on the inner side than the side face of the openings 4b. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008198772(A) 申请公布日期 2008.08.28
申请号 JP20070031928 申请日期 2007.02.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 NISHIURA ATSUNORI
分类号 H01L29/786;G02F1/1368;H01L21/336;H01L29/417 主分类号 H01L29/786
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