| 摘要 |
A flash memory device is configured to store multi-bit data on one cell utilizing fewer program operations. The flash memory device includes a memory cell, a sense amplifier and a write driver circuit. The sense amplifier is connected to a word line and a bit line. The sense amplifier and write driver circuit store data bits to be programmed on the memory cell. The sense amplifier and write driver circuit drives the bit line through a program voltage during a program execution period when at least one bit from among the data bits to be programmed is a program data bit, and performs a verify read operation when a program verify code representing a verify read period corresponds to a state of the data bits to be programmed.
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