发明名称 Semiconductor device and layout method of decoupling capacitor thereof
摘要 A semiconductor device and a layout method of a decoupling capacitor thereof are disclosed. The semiconductor device includes a main power/ground voltage voltage supplying line arranged in a first direction; a plurality of decoupling capacitor cells to reduce power noise generated by the power voltage and the ground voltage in the first direction and in a second direction; a plurality of sub power voltage supplying lines arranged in the second direction in a border of the plurality of decoupling capacitor cells; and a plurality of sub ground voltage supplying lines arranged in a net form in the border of the plurality of decoupling capacitor cells, wherein the plurality of decoupling capacitor cells have a first active region arranged to receive the ground voltage and the second active region disposed to receive the power voltage and to avoid a region where an inversion is formed in the decoupling capacitor.
申请公布号 US2008203436(A1) 申请公布日期 2008.08.28
申请号 US20080069316 申请日期 2008.02.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK JONG-WOOK
分类号 H01L21/768;H01L27/10 主分类号 H01L21/768
代理机构 代理人
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