发明名称 Niederinduktives Halbleiterbauelement mit Halbbrückenkonfiguration
摘要 <p>A semiconductor device has first, second, and third connecting leads ( 1, 2, 3 ), whose respective base points ( 1 f, 2 f, 3 f) have centroids ( 1 m, 2 m, 3 m). The connecting leads are arranged wherein an angle (alpha) between a first line drawn between the centroids ( 1 m, 3 m) of the base points ( 1 f, 3 f) of first lead ( 1 ) and third lead ( 3 ) and a second line drawn between the centroids ( 2 m, 3 m) of the base points ( 2 f, 3 f) of second lead ( 2 ) and third lead ( 3 ) is 20° maximum. In addition, a semiconductor module may incorporate two or more semiconductor devices which are connected electrically in parallel.</p>
申请公布号 DE102004027185(B4) 申请公布日期 2008.08.28
申请号 DE20041027185 申请日期 2004.06.03
申请人 INFINEON TECHNOLOGIES AG 发明人 SCHILLING, OLIVER;PASSE, THOMAS
分类号 H01L25/07;H01L23/48;H01L23/64;H01L27/02 主分类号 H01L25/07
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