Semiconductor component, has intermediate layer dielectric arranged on mask structure, and conductive structure provided in opening, which is electrically connected with another conductive structure

摘要

The component has an intermediate layer dielectric (110) with a trench (116) provided on a semiconductor substrate (100), and a mask structure arranged on the layer dielectric. A conductive structure (118) has a top side, which is lower than a top side of the mask structure, and another intermediate layer dielectric arranged on the mask structure. Another conductive structure (126) is provided in an opening (124), which is electrically connected with the former conductive structure. A diffusion barrier is formed between the conductive structures, and contains a copper silicon nitride layer. An independent claim is also included for a method for manufacturing a semiconductor component.