| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for producing a crystalline semiconductor film in which the position where a grain boundary is formed can be controlled. SOLUTION: The process for producing a crystalline semiconductor film comprises a step for preparing an amorphous semiconductor film 22 supported on a substrate 11, a step for implanting Ar ions in the amorphous semiconductor film, a step for imparting a catalyst element 35 which accelerates crystallization to the amorphous semiconductor film following to the step (b), and step (d) for obtaining a crystalline semiconductor film 24 by solid phase crystallization of at least a part of the amorphous semiconductor film following to the step (c). The process for producing a crystalline semiconductor film comprises step (a) for preparing an amorphous semiconductor film 22 supported on a substrate 11, step (b) for implanting Ar ions in the first region of the semiconductor film in a first concentration, step (c) for imparting a catalyst element which accelerates crystallization to a region comprising the first region and a second region other than the first region of the semiconductor film following to the step (b), and step (d) performing solid phase crystallization of at least the second region of the semiconductor film by heating the semiconductor film following to the step (c). COPYRIGHT: (C)2008,JPO&INPIT |
