发明名称 |
PROCESS FOR FORMING DIFFERENTIAL SPACES IN ELECTRONICS DEVICE INTEGRATED ON A SEMICONDUCTOR SUBSTRATE |
摘要 |
A forms spacers in a electronic device integrated on a semiconductor substrate that includes: first and second transistors each comprising a gate electrode projecting from the substrate and respective source/drain regions. The process comprises: forming in cascade a first protective layer and a first conformal insulating layer of a first thickness on the whole electronic device; forming a first mask to cover the first transistor; removing the first conformal insulating layer not covered by the first mask; removing the first mask; forming a second conformal insulating layer of a second thickness on the whole device; and removing the insulating layers until the protective layer is exposed to form first spacers of a first width on the side walls of the gate electrodes of the first transistor and second spacers of a second width on the side walls of the gate electrodes of the second transistor.
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申请公布号 |
US2008206945(A1) |
申请公布日期 |
2008.08.28 |
申请号 |
US20070680507 |
申请日期 |
2007.02.28 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
SERVALLI GIORGIO;ALBINI GIULIO;CREMONESI CARLO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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