| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a data writing method by which operation reliability of a semiconductor memory device can be improved. <P>SOLUTION: The method is the data writing method of a NAND type flash memory 11 to which nonvolatile memory cells MC having gates connected respectively to word lines WL are connected in series, the method is provided with a step S13 for selecting a scramble system of the data in accordance with a word line address of a memory cell MC in which data is to be written, a step S14 for scrambling the data according to the selected scramble system, and a step S15 for writing the scrambled data in the memory cell MC in accordance with the word line address. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
