| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polarized electron beam generating element capable of obtaining high quantum efficiency QE. <P>SOLUTION: On one side of the semiconductor substrate 12 of a polarized electron beam generating element 10, the lattice constantα<SB>buffer</SB>of a buffer layer 15 is set at a value between the respective lattice constantα<SB>1</SB>and lattice constantα<SB>2</SB>of a first semiconductor layer 16a and a second semiconductor layer 16b composing a semiconductor photoelectric layer 16 made to grow on the buffer layer. Thereby, tension and contraction in these first semiconductor layer 16a and second semiconductor layer 16b alternate, distortion is not easily accumulated, and lattice defects are reduced. Therefore, the numbers of lamination of the first semiconductor layer 16a and the second semiconductor layer 16b composing the semiconductor photoelectric layer 16 can be increased, and high quantum efficiency QE can be obtained. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
