| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser diode capable of improving the laser oscillation efficiency and reducing the threshold current. SOLUTION: A Fabry-Perot type semiconductor laser diode 70 comprises a substrate 1 and a group III nitride semiconductor lamination structure 2 formed on the substrate 1. The substrate 1 is a GaN single crystalline substrate having a nonpolar plane or a semipolar plane as the principal plane. The group III nitride semiconductor lamination structure 2 has crystal growth. The group III nitride semiconductor lamination structure 2 having an m axis as the principal plane of the crystal growth comprises an n-type semiconductor layer 11, a light emitting layer 10 and a p-type semiconductor layer 12 laminated in the m axis direction. The n-type semiconductor layer 11 includes an n-type AlGaN clad layer 14. The p-type semiconductor layer 12 includes a p-type AlGaN clad layer 18. Ridge stripes 20 are parallel to a c axis. A pair of resonator end faces 21, 22 are a +c plane and a -c plane. COPYRIGHT: (C)2008,JPO&INPIT
|
