| 摘要 |
PROBLEM TO BE SOLVED: To form a cylinder insulating film forming a cylinder hole capable of ensuring an electrode area and having a thickness of 3μm by inhibiting a de-focus error. SOLUTION: The cylinder insulating film is formed in a two-layer structure forming a first insulating film 2 having a film thickness of 2/3 of an overall thickness and a second insulating film 3 having a wet etching rate slower than that of the first insulating film 2 and having the film thickness of 1/3 of the overall thickness on the first insulating film 2. In the cylinder insulating film, through-holes 6 are formed to the second and first insulating films by a dry etching, and the first insulating film is expanded preferentially by a wet etching. The first insulating film 2 consists of a silicon oxide film formed by a plasma chemical vapor growth method while using dinitrogen monoxide and monosilane as raw-material gases in this case, and the difference of the height of the irregularities of the surface of the first insulating film 2 is set in 150 nm or less before the second insulating film 3 is formed. COPYRIGHT: (C)2008,JPO&INPIT
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