SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technique for preventing a semiconductor device from being broken by suppressing the concentration of electrons and holes. SOLUTION: An IGBT 10 includes: an n--type drift region 26; a p-type body region 32 in contact with the drift region 26; an n+-type emitter region 34 separated from the drift region 26 by the body region 32; a gate electrode 44 that opposes the drift region 26, the body region 32, and the emitter region 34 via a gate insulation film 42; and a first additional semiconductor region 36. The first additional semiconductor region 36 contains a p-type impurity, is in contact with the gate insulation film 42, and is arranged in the drift region 26 separated from the body region 32 by the drift region 26. Along the gate insulation film 42, the drift region 26, the first additional semiconductor region 36, the drift region 26, the body region 32, and the emitter region 34 are arranged sequentially. COPYRIGHT: (C)2008,JPO&INPIT