发明名称 |
ENHANCEMENT OF ELECTRON AND HOLE MOBILITIES IN <110> Si UNDER BIAXIAL COMPRESSIVE STRAIN |
摘要 |
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a <110> crystal orientation and a biaxial compressive strain. The term "biaxial compressive stress" is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing <110> layer; and creating a biaxial strain in the silicon-containing <110> layer.
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申请公布号 |
US2008206958(A1) |
申请公布日期 |
2008.08.28 |
申请号 |
US20080115731 |
申请日期 |
2008.05.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAN VICTOR;FISCHETTI MASSIMO V.;HERGENROTHER JOHN M.;IEONG MEIKEI;RENGARAJAN RAJESH;REZNICEK ALEXANDER;SOLOMON PAUL M.;SUNG CHUN-YUNG;YANG MIN |
分类号 |
H01L21/20;H01L21/8238;H01L29/04;H01L29/786;H01L31/109 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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