| 发明名称 |
COMPOSITION FOR ANTI-REFLECTIVE COATING, METHOD FOR MANUFACTURING ANTI-REFLECTIVE COATING, AND SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an organic anti-reflective polymer which eliminates light and standing waves generated by a thickness change of a photoresist itself and can form a stable ultrafine pattern, and to provide a method for manufacturing the same. <P>SOLUTION: The organic anti-reflective polymer is a polymer compound represented by general formula (I) or the like. For example, it can prevent reflection from a lower film in a lithography process using 248 nm KrF, 193 nm ArF and 157 nm F<SB>2</SB>lasers and can eliminate light and standing waves generated by a thickness change of a photoresist itself. <P>COPYRIGHT: (C)2008,JPO&INPIT |
| 申请公布号 |
JP2008197624(A) |
申请公布日期 |
2008.08.28 |
| 申请号 |
JP20070295799 |
申请日期 |
2007.11.14 |
| 申请人 |
HYNIX SEMICONDUCTOR INC |
发明人 |
JUNG MIN-HO;HONG SUNG-EUN;BAIK KI-HO |
| 分类号 |
C07C67/14;G02B1/11;C07C69/00;C07C69/54;C07C69/657;C08F12/32;C08F18/16;C08F20/12;C08F20/14;C08F220/14;C08F220/18;C08F220/26;C08F220/28;C08F220/30;C08F220/32;C08K5/00;C08L33/14;C09D5/00;C09D5/32;C09D5/33;C09D133/00;C09D133/06;C09D133/14;C09K;G03C5/00;G03F7/00;G03F7/004;G03F7/11;H01L;H01L21/027;H01L21/31;H01L21/312;H01L21/314;H01L21/469;H01L23/29 |
主分类号 |
C07C67/14 |
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