发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an FeRAM suppressing deterioration of a ferroelectric capacitor due to hydrogen and moisture. SOLUTION: The ferroelectric capacitor 4 of the FeRAM is covered with an AlO film 11 and then hydrogen and moisture are blocked not to reach the ferroelectric capacitor 4. Further, a dummy plug 40 which does not contribute to electric conduction of the FeRAM is provided in a circumference of the ferroelectric capacitor 4 so as to reduce the volume of a second interlayer dielectric 12 in comparison with the case that the dummy plug 40 is not provided, thereby suppressing deterioration of the ferroelectric capacitor 4 due to moisture contained in the second interlayer dielectric 12. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008198885(A) 申请公布日期 2008.08.28
申请号 JP20070034219 申请日期 2007.02.15
申请人 FUJITSU LTD 发明人 TSUCHIDE AKIRA;IZUMI TAKATOSHI
分类号 H01L21/8246;H01L27/105 主分类号 H01L21/8246
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