| 摘要 |
PROBLEM TO BE SOLVED: To prevent attenuation of incident light to a photoelectric conversion element caused by diffusion preventing film or a hard-mask layer necessary when using copper wiring as a wiring layer, and to improve sensitivity and imaging quality. SOLUTION: In a non-photoelectric conversion area 300B where MOS transistor and the like are formed, a diffusion preventing film 307 is laid on a first wiring layer 306B of copper wiring and a diffusion preventing film 312 is laid on a wiring layer 310B of copper wiring likewise. A hard-mask layer 309 for etching stopper is formed on a second interlayer insulating film 308; whereas in the photoelectric conversion area 300A, where a photodiode 304 is formed, the diffusion preventing films 307 and 312, the hard-mask layer 309 are removed and optical properties of the photodiode 304 are improved. COPYRIGHT: (C)2008,JPO&INPIT
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