| 摘要 |
PROBLEM TO BE SOLVED: To provide a better method for manufacturing a semiconductor device, more specifically, a semiconductor device of a dual work function having dual-free silicided (FUSI) metal gate. SOLUTION: The manufacturing method of a dual work function semiconductor device has a step for providing a first metal layer 108 on the first electrode 102a in a first region 101a, and at least a first work-function modulated element. Furthermore, the second metal layer 109 of a second metal is formed at least on the second electrode 102b in a second region 101b, and the first silicidation of the first electrode 102a is performed synchronously with the second silicidation of the second electrode 102b. COPYRIGHT: (C)2008,JPO&INPIT
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