发明名称 SECONDARY ION MASS SPECTROSCOPY AND SEMICONDUCTOR WAFER ANALYSIS METHOD
摘要 PROBLEM TO BE SOLVED: To provide secondary ion mass spectroscopy for correcting measurement errors that depend on the measuring positions, according to the measuring positions in secondary ion mass spectroscopy for detecting secondary ions generated by the incidence of primary ions onto a sample to be analyzed, having a large area and analyzing elements that constitute the sample and the depth where they exist. SOLUTION: In the secondary ion mass spectroscopy for detecting secondary ions generated by the incidence of primary ions onto a sample 20 and analyzing elements constituting the sample and the depth where they exist, the incident angles of the primary ions are corrected, according to the distance between the center of the sample 20 and the measuring position on the basis of a measurement profile of elements in the sample 20 containing elements, such as, impurities that have a distribution in the depth direction, and the sample to be analyzed is analyzed at corrected angles. A profile is acquired as a profile by measuring the impurities with which the sample is doped, on the basis of the depths of the peak concentrations of the impurities. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008196929(A) 申请公布日期 2008.08.28
申请号 JP20070031577 申请日期 2007.02.13
申请人 FUJITSU LTD 发明人 NARITA KAZUKO;KATAOKA YUJI
分类号 G01N23/225 主分类号 G01N23/225
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