| 摘要 |
A non-volatile memory device on a substrate layer ( 2 ) comprises source and drain regions ( 3 ) and a channel region ( 4 ). The source and drain regions ( 3 ) and the channel region ( 4 ) are arranged in a semiconductor layer ( 20 ) on the substrate layer ( 2 ). The channel region ( 4 ) is fin-shaped and extends longitudinally (X) between the source region and the drain region ( 3 ). The channel region ( 4 ) comprises two fin portions ( 4 a , 4 b) and an intra-fin space ( 10 ), the fin portions ( 4 a , 4 b) extending in the longitudinal direction (X) and being spaced apart, and the intra-fin space ( 10 ) being located in between the fin portions ( 4 a , 4 b), and a charge storage area ( 11, 12; 15, 12 ) is located in the intra-fin space ( 10 ) between the fin portions ( 4 a , 4 b).
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