发明名称 |
HIGH YIELD PLASMA ETCH PROCESS FOR INTERLAYER DIELECTRICS |
摘要 |
A high yield plasma etch process for an interlayer dielectric layer of a semiconductor device is provided, according to an embodiment of which a dielectric layer is etched with a nitrogen-containing plasma. In this way, the formation of polymers on a backside bevel of a substrate is avoided or substantially reduced. Remaining polymer at the backside bevel can be removed in situ by post-etch treatment. Further, a plasma etching device is provided comprising a chamber, a substrate receiving space for receiving a substrate, a plasma generator for generating a plasma in the chamber and a temperature conditioner for conditioning a temperature at an outer circumferential region of the substrate receiving space and thereby minimizing temperature gradients at a bevel of the wafer.
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申请公布号 |
US2008202685(A1) |
申请公布日期 |
2008.08.28 |
申请号 |
US20070867972 |
申请日期 |
2007.10.05 |
申请人 |
FISCHER DANIEL;SCHALLER MATTHIAS;LEHR MATTHIAS;DITTMAR KORNELIA |
发明人 |
FISCHER DANIEL;SCHALLER MATTHIAS;LEHR MATTHIAS;DITTMAR KORNELIA |
分类号 |
H01L21/3065;G06F19/00;H01L21/67 |
主分类号 |
H01L21/3065 |
代理机构 |
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主权项 |
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地址 |
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