发明名称 APPARATUS AND METHOD FOR REDUCING NOISE IN MIXED-SIGNAL CIRCUITS AND DIGITAL CIRCUITS
摘要 Apparatus and a method are provided for reducing noise in mixed-signal and digital circuits. One apparatus ( 200 ) includes a metal-oxide-semiconductor field-effect transistor (MOSFET) ( 210 ). MOSFET ( 210 ) includes a doped substrate ( 2210 ) with a source formed proximate a substrate tie ( 2224 ) and a substrate tie ( 2250 ) adjacent substrate ( 2210 ). A ground rail ( 255 ) is coupled to the source and substrate tie ( 2224 ), and a ground rail ( 285 ) is coupled to substrate tie ( 2250 ). Ground rails ( 255 ) and ( 285 ) are configured to be coupled to different ground networks ( 250 and 280 ). One method includes producing a model of a semiconductor device including a standard semiconductor cell ( 710 ). The semiconductor cell is identified as a noise-sensitive or a noise-producing semiconductor cell ( 720 ), and the semiconductor cell is replaced with a corresponding noise-aware semiconductor cell ( 730 ).
申请公布号 US2008203494(A1) 申请公布日期 2008.08.28
申请号 US20070680430 申请日期 2007.02.28
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 SECAREANU RADU M.;HARTIN OLIN L.;SALMAN EMRE
分类号 H01L27/06;G06F17/50 主分类号 H01L27/06
代理机构 代理人
主权项
地址