| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration of dimensional accuracy of a metallic thin film caused by concentration distribution of residual solvent of resist. SOLUTION: A seed layer is formed on a base layer (S4), a first photoresist layer in which residual solvent concentration in an upper part is low and residual solvent concentration in a lower part is high is formed on the seed layer (S6). A mask pattern layer having a first opening reaching the first photoresist layer is formed on the first photoresist layer (S7 to 10). The first photoresist layer is etched while making the mask pattern layer as a mask, and a second opening communicating with the first opening and reaching the seed layer is formed at the first photoresist layer (S11). A metal layer is formed in the second opening by an electroplating method while making the first photoresist layer as a photoresist frame and making the seed layer as an electrode (S12). After forming the metal layer in the second opening, the first photoresist layer and the mask pattern layer are removed (S13). COPYRIGHT: (C)2008,JPO&INPIT
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