发明名称 |
MOS TRANSISTORS HAVING RECESSED CHANNEL REGIONS AND METHODS OF FABRICATING THE SAME |
摘要 |
A MOS transistor having a recessed channel region is provided. A MOS transistor includes a source region and a drain region disposed in an active region of a semiconductor substrate and spaced apart from each other. A gate trench structure is disposed in the active region between the source and drain regions. A gate electrode is disposed in the gate trench structure. A gate dielectric layer is interposed between the gate trench structure and the gate electrode. A semiconductor region is disposed between the gate trench structure and the gate dielectric layer. The semiconductor region is formed of a different material from the active region. A method of fabricating the MOS transistor having a recessed channel region is also provided.
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申请公布号 |
US2008203428(A1) |
申请公布日期 |
2008.08.28 |
申请号 |
US20070957810 |
申请日期 |
2007.12.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI JAY-BOK |
分类号 |
H01L29/778;H01L21/336 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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