发明名称 SUPER HIGH DENSITY MODULE WITH INTEGRATED WAFER LEVEL PACKAGES
摘要 <p>SUPER HIGH DENSITY MODULE WITH INTEGRATED WAFER LEVEL PACKAGES A wafer level package, and a semiconductor wafer, electronic system, and a memory module that include one or more of the wafer level packages, and methods of fabricating the die packages on a wafer level, and integrated circuit modules that include one or more packages are provided. In one embodiment, the die package comprises a redistribution layer interconnecting two or more dies disposed on a substrate, typically a semiconductor wafer, the redistribution layer including a first trace connecting a bond pad of each of two dies, and a second trace connecting one of the bond pads of the two dies to a ball pad. The die package of the invention can comprise memory devices such as static random access memories (SRAMs), and can be incorporated into a variety of electronic systems as part of a memory package such as single in line memory modules (SIMMs) or dual in line memory modules.</p>
申请公布号 SG144746(A1) 申请公布日期 2008.08.28
申请号 SG20060080824 申请日期 2002.05.21
申请人 MICRON TECHNOLOGY, INC. 发明人 CHIA YONG POO;BOON SUAN JEUNG;LOW SIU WAF;NEO YONG LOO;SER BOK LENG
分类号 (IPC1-7):H01L25/065;H01L21/44;H01L23/538 主分类号 (IPC1-7):H01L25/065
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